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Characterization Of Semiconductor Heterostructures And Nanostructures

Author: Giovanni Agostini
Publisher: Newnes
ISBN: 044459549X
Size: 49.62 MB
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Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Characterization Of Semiconductor Heterostructures And Nanostructures

Author: Carlo Lamberti
Publisher: Elsevier Science
ISBN:
Size: 70.44 MB
Format: PDF, Mobi
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Characterization of Semiconductor Heterostructures and Nanostructures” is structured in chapters, each one devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. A chapter is devoted to the ab initio modeling. The book has basically a double aim. The first one lies on the educational ground. The book provides the basic concept of each of the selected techniques with an approach understandable by master and PhD students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: a first part devoted to explain the basic concepts, providing the larger possible audience, and a second one to the discussion of the most peculiar and innovative examples, allowing the book to have the longer possible life time. Of course, the book is devoted to the specialized subset of scientists working in the fields of design, growth, characterization, testing of heterostructures-based devices in both academic and industrial laboratories. But the final goal is somewhat more ambitious, and in this regard the topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc… properties of matter at the nanometer (even sub-nanometer) scale. In this way it is aimed to become a reference book in the much broader, and extremely hot, field of Nanotechnology. - Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures. - Most of the chapters are authored by scientists that are world wide among the top-ten in publication ranking of the specific field. - Each chapter starts with a didactic introduction on the technique. - The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures.

Microscopy Of Semiconducting Materials 2007

Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 9781402086151
Size: 59.32 MB
Format: PDF, Kindle
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This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.