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Fundamentals Of Modern Vlsi Devices

Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 110739399X
Size: 49.24 MB
Format: PDF, Docs
View: 6831
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Fundamentals Of Modern Vlsi Devices

Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 9781107635715
Size: 31.71 MB
Format: PDF, ePub, Mobi
View: 4561
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Fundamentals Of Modern Vlsi Devices

Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 9780521832946
Size: 49.33 MB
Format: PDF, Kindle
View: 3749
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Fundamentals Of Ultra Thin Body Mosfets And Finfets

Author: Jerry G. Fossum
Publisher: Cambridge University Press
ISBN: 1107434491
Size: 63.82 MB
Format: PDF, ePub, Docs
View: 4948
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Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Modern Vlsi Design

Author: Wayne Wolf
Publisher: Pearson Education
ISBN: 9780137010080
Size: 41.27 MB
Format: PDF, ePub, Docs
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The Number 1 VLSI Design Guide—Now Fully Updated for IP-Based Design and the Newest Technologies Modern VLSI Design, Fourth Edition, offers authoritative, up-to-the-minute guidance for the entire VLSI design process—from architecture and logic design through layout and packaging. Wayne Wolf has systematically updated his award-winning book for today’s newest technologies and highest-value design techniques. Wolf introduces powerful new IP-based design techniques at all three levels: gates, subsystems, and architecture. He presents deeper coverage of logic design fundamentals, clocking and timing, and much more. No other VLSI guide presents as much up-to-date information for maximizing performance, minimizing power utilization, and achieving rapid design turnarounds.

Semiconductor Material And Device Characterization

Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Size: 14.49 MB
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Resistivity -- Carrier and doping density -- Contact resistance and Schottky barriers -- Series resistance, channel length and width, and threshold voltage -- Defects -- Oxide and interface trapped charges, oxide thickness -- Carrier lifetimes -- Mobility -- Charge-based and probe characterization -- Optical characterization -- Chemical and physical characterization -- Reliability and failure analysis.

Electronic Properties Of Crystalline Solids

Author: Richard Bube
Publisher: Elsevier
ISBN: 0323146651
Size: 43.43 MB
Format: PDF, ePub, Mobi
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Electronic Properties of Crystalline Solids: An Introduction to Fundamentals discusses courses in the electronic properties of solids taught in the Department of Materials Science and Engineering at Stanford University. The book starts with a brief review of classical wave mechanics, discussing concept of waves and their role in the interactions of electrons, phonons, and photons. The book covers the free electron model for metals, and the origin, derivation, and properties of allowed and forbidden energy bands for electrons in crystalline materials. It also examines transport phenomena and optical effects in crystalline materials, including electrical conductivity, scattering phenomena, thermal conductivity, Hall and thermoelectric effects, magnetoresistance, optical absorption, photoconductivity, and other photoelectronic effects in both ideal and real materials. This book is intended for upper-level undergraduates in a science major, or for first- or second-year graduate students with an interest in the scientific basis for our understanding of properties of materials.

Low Power Vlsi Design

Author: Angsuman Sarkar
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110455293
Size: 64.14 MB
Format: PDF, ePub, Mobi
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This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts.

Modern Semiconductor Devices For Integrated Circuits

Author: Chenming Hu
Publisher: Prentice Hall
ISBN: 0136085253
Size: 42.28 MB
Format: PDF, Docs
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Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS: Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal–Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs—Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET: Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers.