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Heterostructures And Quantum Devices

Author: Norman G. Einspruch
Publisher: Academic Pr
ISBN: 9780122341243
Size: 34.15 MB
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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Quantum Heterostructures

Author: Vladimir Vasilʹevich Mitin
Publisher: Cambridge University Press
ISBN: 9780521636353
Size: 14.11 MB
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Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Advanced Semiconductor Heterostructures

Author: Mitra Dutta
Publisher: World Scientific
ISBN: 9812382895
Size: 37.66 MB
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This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semi-conductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semi-conductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments. Contents: Novel Heterostructure Devices: Electron-Phonon Wave Interactions in Inter-subband Laser Heterostructures (M Kisin et al.); Quantum Dot Infrared Detectors and Sources (P Bhattacharya et al.);Generation of Terahertz Emission Based on Intersubband Transitions (Q Hu); Midinfrared GaSb-Based Lasers with Type I Heterointerfaces (D V Donetsky et al.); Advances in Quantum Dot Research and Technology: The Path to Applications

High Speed Heterostructure Devices

Author: Patrick Roblin
Publisher: Cambridge University Press
ISBN: 9781139437462
Size: 14.99 MB
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Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Low Dimensional Semiconductor Structures

Author: Keith Barnham
Publisher: Cambridge University Press
ISBN: 9780521599047
Size: 29.94 MB
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Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical and transport properties, their role in exploring physical phenomena, and their utilization in devices. The authors begin with a detailed description of the epitaxial growth of semiconductors. They then deal with the physical behaviour of electrons and phonons in low-dimensional structures. A discussion of localization effects and quantum transport phenomena is followed by coverage of the optical properties of quantum wells. They then go on to discuss non-linear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references. It is suitable as a textbook for graduate-level courses in electrical engineering and applied physics. It will also be of interest to engineers involved in the development of semiconductor devices.

Physical Foundations Of Solid State Devices

Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382620
Size: 16.98 MB
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It is beneficial for technical personnel working in the field of microelectronic, optoelectronic, and photonic semiconductor devices to get a good understanding of the physical foundations ofmodern semiconductor devices. Questions that technical personnel may ask are: How areelectrons propagating in the periodic potential of a semiconductor crystal lattice? What are thefoundations of semiconductor heterostructure devices? How does quantum mechanics relateto semiconductor heterostructure devices? This book tries to answer questions such as these. The book provides a basis for the understanding of modern semiconductor devices that havedimensions in the nanometer range, i.e. comparable to the electron de Broglie wavelength. Classical and semi-classical physics no longer gives a full description of a number of physicalprocesses. The inclusion of quantum mechanical principles becomes mandatory and provides a useful description of many physical processes in electronic, optoelectronic, and photonic heterostructure devices. The first part of the book (Chapters 1 – 11) teaches quantum-mechanical principles, including the postulates of quantum mechanics, operators, the uncertainty principle, the Schrödinger equation, non-periodic and periodic potentials, quantum wells, and perturbation theory. The second part of the book (Chapters 12 – 20) applies these principles to semiconductor devices and discusses the density of states, semiconductor statistics, carrier concentrations, doping, tunneling, and some aspects of heterostructure devices. The book may be of particular interest to individuals working in the fields of microelectronics, optoelectronics, and photonics with an educational background in Electrical Engineering, Applied Physics, or Materials Science.

Physics And Technology Of Heterojunction Devices

Author: Institution of Electrical Engineers
Publisher: IET
ISBN: 9780863412042
Size: 80.47 MB
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The demand for liquid crystals with better display parameters and lower power consumption has stimulated much research into their properties and characterization. A large team of over 50 leading researchers from the USA, Europe and Japan have focused their expertise to extract and review data on a wide range of properties of nematics, including those which are essential to the development of all types of liquid crystal device. Where appropriate these properties are also explained with expert commentary. The book is fully illustrated and structured for reference.

Quantum Dot Heterostructures

Author: Dieter Bimberg
Publisher: John Wiley & Sons
ISBN: 9780471973881
Size: 32.12 MB
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Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann andNikolai N. Ledentsov Institute of Solid State Physics, TechnischeUniversität Berlin, Germany Quantum dots are nanometer-sizesemiconductor structures, and represent one of the most rapidlydeveloping areas of current semiconductor research as increases inthe speed and decreases in the size of semiconductor devices becomemore important. They present the utmost challenge to semiconductortechnology, making possible fascinating novel devices. Thisimportant new reference book focuses on the key phenomena andprinciples. Chapter 1 provides a brief account of the history ofquantum dots, whilst the second chapter surveys the variousfabrication techniques used in the past two decades, and introducesthe concept of self-organized growth. This topic is expanded in thefollowing chapter, which presents a broad review ofself-organization phenomena at surfaces of crystals. Experimentalresults on growth of quantum dot structures in many differentsystems and on their structural characterization are presented inChapter 4. Basic properties of the dots relate to their geometricstructure and chemical composition. Numerical modeling of theelectronic and optical properties of real dots is presented inChapter 5, together with general theoretical considerations oncarrier capture, relaxation, recombination and properties ofquantum dot lasers. Chapters 6 and 7 summarize experimental resultson electronic, optical and electrical properties. The bookconcludes by disoussing highly topical results on quantum-dot-basedphotonic devices - mainly quantum dot lasers. Quantum DotHeterostructures is written by some of the key researchers who havecontributed significantly to the development of the field, and havepioneered both the theoretical understanding of quantum dot relatedphenomena and quantum dot lasers. It is of great interest tograduate and postgraduate students, and to researchers insemiconductor physics and technology and optoelectronics.

Impact Of Ion Implantation On Quantum Dot Heterostructures And Devices

Author: Arjun Mandal
Publisher: Springer
ISBN: 9811043345
Size: 23.17 MB
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This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.