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Surface And Interface Effects In Vlsi

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217760
Size: 46.72 MB
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VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Vlsi Reliability

Author: Anant G. Sabnis
Publisher: Academic Pr
ISBN: 9780122341229
Size: 68.44 MB
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As integrated cicuits become more complex, with smaller and smaller geometries, much more care must be taken to avoid reliability problems. This practical volume covers a broad spectrum of reliability issues in integrated circuits, from basic concepts to packaging. Topics include:**failure analysis techniques**radiation effects**reliability assurance and qualification

Gaas Microelectronics

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217779
Size: 19.80 MB
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VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Compounts Semiconductors

Author: Paul H. Holloway
Publisher: CRC Press
ISBN: 9780849301650
Size: 58.15 MB
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This book provides a review of the state-of-the-advancing-art in growth, processing and devices from compound semiconductors. Consisting of the proceedings of an important topical conference held at the University of Florida, speakers from both the U.S. and Japan were present. This fascinating work discusses critical issues in growth and characterization by semi-insulating bulk crystals, with particular emphasis placed on the latest modification of gas sources. It includes the advantages, limitations, and techniques pertaining to chemical vapor deposition. This compilation presents the most recent advances in the new technologies involving compound semiconductors, thus it fills an important need in the fast-moving field of microelectronics. This one-of-a-kind resource provides contrasts and insight into U.S. and Japanese technologies and devices as well as indications of future directions. It provides a very up-to-date and comprehensive treatment of world-class scientific and technological developments in this astounding area of major commercial importance. These proceedings will be a useful, indispensable resource for scientific researchers, process engineers, and technology strategists.

Vlsi Metallization

Author: Krishna Shenai
Publisher: Artech House Publishers
ISBN: 9780890065013
Size: 28.59 MB
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This comprehensive collection of reprinted articles presents the most important developments on VLSI contact and interconnect technologies and applications. The book covers important developments in metallization of compound semiconductor technologies, and includes a section on metallization reliability and high speed testing.

Process And Device Simulation For Mos Vlsi Circuits

Author: P. Antognetti
Publisher: Springer Science & Business Media
ISBN: 9400968426
Size: 11.21 MB
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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.

Microresonators As Building Blocks For Vlsi Photonics

Author: Francesco Michelotti
Publisher: Amer Inst of Physics
ISBN: 9780735401846
Size: 77.44 MB
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The aim of the course was to provide state-of-the-art information in the field of advanced devices for large scale integrated photonics. The course focused on the theory and application of optical microresonators for wavelength selection and routing, for switching and for high-speed modulation. Also materials aspects, design and manufacturing of integrated optics devices based on these resonators for use in optical communication networks were discussed. In particular, micro-ring and micro-disk resonators and photonic bang-gap structures were addressed. At a more fundamental level, some lectures were devoted to promising phenomena that could allow new applications in photonics, such as entangled pairs generation and single quantum dot emission in a cavity.