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Vlsi Electronics

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217698
Size: 22.96 MB
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VLSI Electronics

Vlsi Electronics Microstructure Science

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217744
Size: 56.92 MB
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VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.

Lithography For Vlsi

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217825
Size: 69.62 MB
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VLSI Electronics Microstructure Science, Volume 16: Lithography for VLSI treats special topics from each branch of lithography, and also contains general discussion of some lithographic methods. This volume contains 8 chapters that discuss the various aspects of lithography. Chapters 1 and 2 are devoted to optical lithography. Chapter 3 covers electron lithography in general, and Chapter 4 discusses electron resist exposure modeling. Chapter 5 presents the fundamentals of ion-beam lithography. Mask/wafer alignment for x-ray proximity printing and for optical lithography is tackled in Chapter 6. Chapters 7 and 8 on metrology deal with the characterization of lithography by measurements of various types. Engineers, scientists, and technical managers in the semiconductor industry, and engineering and applied physics faculty and graduate students will find the text very useful.

Heterostructures And Quantum Devices

Author: Norman G. Einspruch
Publisher: Elsevier
ISBN: 1483295176
Size: 39.11 MB
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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Gaas Microelectronics

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217779
Size: 13.50 MB
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VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Vlsi And Computer Architecture

Author: Ravi Shankar
Publisher: Academic Press
ISBN: 1483217841
Size: 58.91 MB
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VLSI Electronics Microstructure Science, Volume 20: VLSI and Computer Architecture reviews the approaches in design principles and techniques and the architecture for computer systems implemented in VLSI. This volume is divided into two parts. The first section is concerned with system design. Chapters under this section focus on the discussion of such topics as the evolution of VLSI; system performance and processor design considerations; and VLSI system design and processing tools. Part II of the book focuses on the architectural possibilities that have become cost effective with the development of VLSI circuits. Topics on architectural requirements and various architectures such as the Reduced Instruction Set, Extended Von Neumann, Language-Oriented, and Microprogrammable architectures are elaborated in detail. Also included are chapters that discuss the evaluation of architecture, multiprocessing configurations, and the future of VLSI. Computer designers, those evaluating computer systems, researchers, and students of computer architecture will find the book very useful.

Vlsi Metallization

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217817
Size: 11.65 MB
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VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.