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Vlsi Electronics Microstructure Science

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217744
Size: 20.91 MB
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VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.

Vlsi Reliability

Author: Anant G. Sabnis
Publisher: Academic Pr
ISBN: 9780122341229
Size: 46.54 MB
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As integrated cicuits become more complex, with smaller and smaller geometries, much more care must be taken to avoid reliability problems. This practical volume covers a broad spectrum of reliability issues in integrated circuits, from basic concepts to packaging. Topics include:**failure analysis techniques**radiation effects**reliability assurance and qualification

Gaas Microelectronics

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217779
Size: 48.33 MB
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VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Lithography For Vlsi

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217825
Size: 33.29 MB
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VLSI Electronics Microstructure Science, Volume 16: Lithography for VLSI treats special topics from each branch of lithography, and also contains general discussion of some lithographic methods. This volume contains 8 chapters that discuss the various aspects of lithography. Chapters 1 and 2 are devoted to optical lithography. Chapter 3 covers electron lithography in general, and Chapter 4 discusses electron resist exposure modeling. Chapter 5 presents the fundamentals of ion-beam lithography. Mask/wafer alignment for x-ray proximity printing and for optical lithography is tackled in Chapter 6. Chapters 7 and 8 on metrology deal with the characterization of lithography by measurements of various types. Engineers, scientists, and technical managers in the semiconductor industry, and engineering and applied physics faculty and graduate students will find the text very useful.

Advanced Mos Device Physics

Author: Norman Einspruch
Publisher: Elsevier
ISBN: 0323153135
Size: 60.28 MB
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VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

Heterostructures And Quantum Devices

Author: Norman G. Einspruch
Publisher: Elsevier
ISBN: 1483295176
Size: 80.57 MB
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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Vlsi Handbook

Author: Norman Einspruch
Publisher: Academic Press
ISBN: 0323141994
Size: 33.58 MB
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VLSI Handbook is a reference guide on very large scale integration (VLSI) microelectronics and its aspects such as circuits, fabrication, and systems applications. This handbook readily answers specific questions and presents a systematic compilation of information regarding the VLSI technology. There are a total of 52 chapters in this book and are grouped according to the fields of design, materials and processes, and examples of specific system applications. Some of the chapters under fields of design are design automation for integrated circuits and computer tools for integrated circuit design. For the materials and processes, there are many chapters that discuss this aspect. Some of them are manufacturing process technology for metal-oxide semiconductor (MOS) VLSI; MOS VLSI circuit technology; and facilities for VLSI circuit fabrication. Other concepts and materials discussed in the book are the use of silicon material in different processes of VLSI, nitrides, silicides, metallization, and plasma. This handbook is very useful to students of engineering and physics. Also, researchers (in physics and chemistry of materials and processes), device designers, and system designers can also benefit from this book.