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Essentials Of Electronic Testing For Digital Memory And Mixed Signal Vlsi Circuits

Author: M. Bushnell
Publisher: Springer Science & Business Media
ISBN: 0306470403
Size: 11.70 MB
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The modern electronic testing has a forty year history. Test professionals hold some fairly large conferences and numerous workshops, have a journal, and there are over one hundred books on testing. Still, a full course on testing is offered only at a few universities, mostly by professors who have a research interest in this area. Apparently, most professors would not have taken a course on electronic testing when they were students. Other than the computer engineering curriculum being too crowded, the major reason cited for the absence of a course on electronic testing is the lack of a suitable textbook. For VLSI the foundation was provided by semiconductor device techn- ogy, circuit design, and electronic testing. In a computer engineering curriculum, therefore, it is necessary that foundations should be taught before applications. The field of VLSI has expanded to systems-on-a-chip, which include digital, memory, and mixed-signalsubsystems. To our knowledge this is the first textbook to cover all three types of electronic circuits. We have written this textbook for an undergraduate “foundations” course on electronic testing. Obviously, it is too voluminous for a one-semester course and a teacher will have to select from the topics. We did not restrict such freedom because the selection may depend upon the individual expertise and interests. Besides, there is merit in having a larger book that will retain its usefulness for the owner even after the completion of the course. With equal tenacity, we address the needs of three other groups of readers.

Heterostructures And Quantum Devices

Author: Norman G. Einspruch
Publisher: Academic Pr
ISBN: 9780122341243
Size: 47.57 MB
Format: PDF
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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Vlsi Electronics Microstructure Science

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217744
Size: 10.86 MB
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VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.

Vlsi Design

Author: A. ALBERT RAJ
Publisher: PHI Learning Pvt. Ltd.
ISBN: 8120334310
Size: 36.63 MB
Format: PDF
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This text is intended for the undergraduate engineering students in Electrical and Electronics Engineering, Electronics and Communication Engineering, and Electronics and Instrumentation Engineering, and those pursuing postgraduate courses in Applied Electronics and VLSI Design. With the electronic devices and chips becoming smaller and smaller, the sizes of circuits and transistors on the microchips are approaching atomic levels. And so, Very Large-Scale Integration (VLSI) Design refers to the process of placing hundreds of thousands of electronic components on a single chip which nearly all modern computer architectures employ, and this technology has assumed a significant role in today’s tech savvy world. This well-organized, up-to-date and compact text explains the basic concepts of MOS technology including the fabrication methods, MOS characteristic behaviour, and design processes for layouts, etc. in a crisp and easy-to-learn style. The latest and most advanced techniques for maximising performance, minimising power consumption, and achieving rapid design turnarounds are discussed with great skill by the authors. Key Features  Gives an in-depth analysis of MOS structure, device characteristics, modelling and MOS device fabrication techniques.  Provides detailed description of CMOS design of combinatorial, sequential and arithmetic circuits with emphasis on practical applications.  Offers an insight into the CMOS testing techniques for the design of VLSI circuits.  Gives a number of solved problems in VHDL and Verilog languages.  Provides a number of short answer questions to help the students during examinations.

Fundamentals Of Modern Vlsi Devices

Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 110739399X
Size: 14.52 MB
Format: PDF, ePub
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.