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Heterostructures And Quantum Devices

Author: Norman G. Einspruch
Publisher: Academic Pr
ISBN: 9780122341243
Size: 21.78 MB
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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Vlsi Reliability

Author: Anant G. Sabnis
Publisher: Academic Pr
ISBN: 9780122341229
Size: 12.81 MB
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As integrated cicuits become more complex, with smaller and smaller geometries, much more care must be taken to avoid reliability problems. This practical volume covers a broad spectrum of reliability issues in integrated circuits, from basic concepts to packaging. Topics include:**failure analysis techniques**radiation effects**reliability assurance and qualification

Beam Processing Technologies

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 148321785X
Size: 22.62 MB
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Beam Processing Technologies is a collection of papers that deals with the miniaturization of devices that will be faster, consume less power, and cost less per operation or fabrication. One paper discusses metal oxide semiconductor (MOS) integrated circuit technology including the operation of devices whose lateral and vertical dimensions are scaled down. If the devices' silicon doping profiles are increased by the same scale factor, they can operate on lower voltages and currents, with the same performance. Another paper describes laser beam processing and wafer-scale integration as techniques to increase the number of devices on a silicon chip. Electron beam technologies can be used in many fabrication processes such as in microlithography, selective oxidation, doping, metrology. Ion beam applications depend on the presence of the ion introduced into the device (e.g. implantation doping), on pseudoelastic collisions (e.g. physical sputtering or crystal damage), and on inelastic scattering (e.g. polymer resist exposure). Silicon molecular beam epitaxy (SiMBE) can also grow high-quality layers at low temperature, particularly concerning germanium, especially as reagrds the growth system design and utilization of n- and p-type doping. Chemical beam epitaxy (CBE) is another epitaxial growth technique that can surpass MBE and metal organic chemical vapor deposition (MO-CVD). The collection is suitable chemical engineers, industrial physicists, and researchers whose work involve micro-fabrication and development of integrated circuits.

Vlsi Electronics Microstructure Science

Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217744
Size: 17.86 MB
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VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.

Vlsi Design

Publisher: PHI Learning Pvt. Ltd.
ISBN: 8120334310
Size: 28.88 MB
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This text is intended for the undergraduate engineering students in Electrical and Electronics Engineering, Electronics and Communication Engineering, and Electronics and Instrumentation Engineering, and those pursuing postgraduate courses in Applied Electronics and VLSI Design. With the electronic devices and chips becoming smaller and smaller, the sizes of circuits and transistors on the microchips are approaching atomic levels. And so, Very Large-Scale Integration (VLSI) Design refers to the process of placing hundreds of thousands of electronic components on a single chip which nearly all modern computer architectures employ, and this technology has assumed a significant role in today’s tech savvy world. This well-organized, up-to-date and compact text explains the basic concepts of MOS technology including the fabrication methods, MOS characteristic behaviour, and design processes for layouts, etc. in a crisp and easy-to-learn style. The latest and most advanced techniques for maximising performance, minimising power consumption, and achieving rapid design turnarounds are discussed with great skill by the authors. Key Features  Gives an in-depth analysis of MOS structure, device characteristics, modelling and MOS device fabrication techniques.  Provides detailed description of CMOS design of combinatorial, sequential and arithmetic circuits with emphasis on practical applications.  Offers an insight into the CMOS testing techniques for the design of VLSI circuits.  Gives a number of solved problems in VHDL and Verilog languages.  Provides a number of short answer questions to help the students during examinations.