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Extended Defects In Semiconductors

Author: D. B. Holt
Publisher: Cambridge University Press
ISBN: 1139463594
Size: 43.84 MB
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The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Nanostructured Semiconductor Oxides For The Next Generation Of Electronics And Functional Devices

Author: Serge Zhuiykov
Publisher: Woodhead Publishing
ISBN: 1782422242
Size: 12.61 MB
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Nanostructured Semiconductor Oxides for the Next Generation of Electronics and Functional Devices focuses on the development of semiconductor nanocrystals, their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells, and chemical sensors. Semiconductor oxides are used in electronics, optics, catalysts, sensors, and other functional devices. In their 2D form, the reduction in size confers exceptional properties, useful for creating faster electronics and more efficient catalysts. After explaining the physics affecting the conductivity and electron arrangement of nanostructured semiconductors, the book addresses the structural and chemical modification of semiconductor nanocrystals during material growth. It then covers their use in nanoscale functional devices, particularly in electronic devices and carbon nanotubes. It explores the impact of 2D nanocrystals, such as graphene, chalcogenides, and oxide nanostructures, on research and technology, leading to a discussion of incorporating graphene and semiconductor nanostructures into composites for use in energy storage. The final three chapters focus on the applications of these functional materials in photovoltaic cells, solid oxide fuel cells, and in environmental sensors including pH, dissolved oxygen, dissolved organic carbon, and dissolved metal ion sensors. Nanostructured Semiconductor Oxides for the Next Generation of Electronics and Functional Devices is a crucial resource for scientists, applied researchers, and production engineers working in the fabrication, design, testing, characterization, and analysis of new semiconductor materials. This book is a valuable reference for those working in the analysis and characterization of new nanomaterials, and for those who develop technologies for practical devices fabrication. Focuses on the development of semiconductor nanocrystals, their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells, and chemical sensors Reviews fundamental physics of conductivity and electron arrangement before proceeding to practical applications A vital resource for applied researchers and production engineers working with new semiconductor materials

Cdte And Related Compounds Physics Defects Hetero And Nano Structures Crystal Growth Surfaces And Applications

Author:
Publisher: Elsevier
ISBN: 9780080914589
Size: 15.32 MB
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Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT Review of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed

Point And Extended Defects In Semiconductors

Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Size: 12.33 MB
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The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Silicon Carbide

Author: Moumita Mukherjee
Publisher: BoD – Books on Demand
ISBN: 9533079681
Size: 37.85 MB
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Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Iii Nitride Semiconductors Electrical Structural And Defects Properties

Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 9780080534442
Size: 64.10 MB
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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Simulation Of Semiconductor Processes And Devices 2007

Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728619
Size: 40.25 MB
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This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.

Progress In Transmission Electron Microscopy 2

Author: Xiao-Feng Zhang
Publisher: Springer Science & Business Media
ISBN: 9783540676812
Size: 57.56 MB
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Transmission electron microscopy (TEM) is now recognized as a crucial tool in materials science. This book, authored by a team of expert Chinese and international authors, covers many aspects of modern electron microscopy, from the architecture of novel electron microscopes, advanced theories and techniques in TEM and sample preparation, to a variety of hands-on examples of TEM applications. Volume 2 illustrates the important role that TEM is playing in the development and characterization of advanced materials, including nanostructures, interfacial structures, defects, and macromolecular complexes.

Sic Power Materials

Author: Zhe Chuan Feng
Publisher: Springer Science & Business Media
ISBN: 9783540206668
Size: 63.97 MB
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In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.